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MOSFETs

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Description
High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry.

Features
  • Fully isolated package
  • Very low on-resistance
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Low drain to case capacitance
  • Low internal inductance
  • Optimized for SMPS applications
  • Easy to use and parallel
  • Industry standard outline
  • Compliant to RoHS Directive 2002/95/EC
  • Designed and qualified for industrial level


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Item #

Package

Circuit

VDSS(V)

ID(A)

TC(°C)

RDS(on)(ohms)

TJ(°C)

EAS(mJ)

IAR(A)

FA38SA50LCP SOT-227 Single switch no diode 500 V 24 100 0.13 150 580 38
FA57SA50LCP SOT-227 Single switch no diode 500 V 36 100 0.08 150 725 57
FB190SA10 SOT-227 Single switch no diode 100 V 130 100 0.0065 150 700 190
FA40SA50LC SOT-227 Single Switch 500 V 40 25 0.106 150 400 13
FA72SA50LC SOT-227 Single Switch 500 V 72 25 61.5 150 725 22
FC220SA20 SOT-227 Single Switch 200 V 220 25 4.80 175 1200 70
FC360SA15 SOT-227 Single Switch 150 V 360 25 2.70 175 1500 N/A
FC420SA10 SOT-227 Single Switch 100 V 435 25 1.30 175 780 N/A
  Results 1 - 8 of 8 1