Vishay ETF150Y65N features:• Trench IGBT technology• FRED Pt® clamping diodes• PressFit pins technology• Exposed Al2O3 substrate with low thermal resistance• Short circuit rated• Square RBSOA• Integrated thermistor• Low internal inductances• Low switching loss• PressFit pins locking technology. Patent # US.263.820 B2• UL approved file E78996
DescriptionVS-ETF150Y65N is an integrated solution for a multi levelinverter stage in a single package. The EMIPAK-2B packageis easy to use thanks to the PressFit pins and the exposedsubstrate provides improved thermal performance. Theoptimized layout also helps to minimize stray parameters,allowing for better EMI performance.
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