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All Categories > IGBT Power Modules > IGBT Modules > Item # ETF150Y65N  
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Item # ETF150Y65N, Vishay ETF150Y65N

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SOT227

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Vishay ETF150Y65N features:

• Trench IGBT technology
• FRED Pt® clamping diodes
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal resistance
• Short circuit rated
• Square RBSOA
• Integrated thermistor
• Low internal inductances
• Low switching loss
• PressFit pins locking technology. Patent # US.263.820 B2
• UL approved file E78996

Description

VS-ETF150Y65N is an integrated solution for a multi level
inverter stage in a single package. The EMIPAK-2B package
is easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.

 




 Specifications  

Package

SOT-227

Circuit

Half Bridge Inverter

VCES

650 V

VCE (ON)

1.70

IC

150 A

Ic (Amps)

25

at TC

25

 DOWNLOADS 

 width= SOT-227 Mounting Instructions
(PDF, 61KB)

 width= ETF150Y65N
(PDF, 341KB)


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