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MOSFET
• Enhanced body diode dV/dt and dI F/dt capability• Improved gate avalanche and dynamic dV/dt ruggedness• Fully characterized capacitance and avalanche SOA• Fully isolated package• Easy to use and parallel• Low on-resistance• Simple drive requirements
CHOPPER DIODE
• Low forward voltage drop• Ultrafast, soft reverse recovery, with high operating junction temperature (TJ max. = 175 °C)• UL approved file E78996